darlington complementary silicon power transistors . . . designed for generalpurpose amplifier and lowspeed switching motor control applications. ? similar to the popular npn 2n6284 and the pnp 2n6287 ? rugged rbsoa characteristics ? monolithic construction with builtin collectoremitter diode ??????????????????????? ??????????????????????? maximum ratings ???????????? ???????????? rating ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? ???????????? collectoremitter voltage ????? ????? v ceo ?????? ?????? 100 ??? ??? vdc ???????????? ???????????? collectorbase voltage ????? ????? v cb ?????? ?????? 100 ??? ??? vdc ???????????? ???????????? emitterbase voltage ????? ????? v eb ?????? ?????? 5.0 ??? ??? vdc ???????????? ? ?????????? ? ???????????? collector current e continuous peak ????? ? ??? ? ????? i c ?????? ? ???? ? ?????? 20 40 ??? ? ? ? ??? adc ???????????? ???????????? base current ????? ????? i b ?????? ?????? 0.5 ??? ??? adc ???????????? ? ?????????? ? ???????????? total device dissipation @ t c = 25 c derate above 25 c ????? ? ??? ? ????? p d ?????? ? ???? ? ?????? 160 1.28 ??? ? ? ? ??? watts w/ c ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ????? ? ??? ? ????? t j , t stg ?????? ? ???? ? ?????? 65 to + 150 ??? ? ? ? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? characteristic ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to case ????? ????? r q jc ?????? ?????? 0.78 ??? ??? c/w 160 p d , power dissipation (watts) 0 t c , case temperature ( c) 50 75 125 150 200 100 175 25 figure 1. power derating 0 20 40 60 80 100 140 120 preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2002 january, 2002 rev. 3 1 publication order number: mjh6284/d mjh6284 mjh6287 darlington 20 ampere complementary silicon power transistors 100 volts 160 watts on semiconductor preferred devices npn pnp case 340d02
mjh6284 mjh6287 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter sustaining voltage (i c = 0.1 adc, i b = 0) ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 100 ???? ? ?? ? ???? e ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 50 vdc, i b = 0) ????? ? ??? ? ????? i ceo ??? ? ? ? ??? e ???? ? ?? ? ???? 1.0 ??? ? ? ? ??? madc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = rated v cb , v be(off) = 1.5 vdc) (v ce = rated v cb , v be(off) = 1.5 vdc, t c = 150 c) ????? ? ??? ? ????? i cex ??? ? ? ? ??? e e ???? ? ?? ? ???? 0.5 5.0 ??? ? ? ? ??? madc ?????????????????????? ?????????????????????? emitter cutoff current (v be = 5.0 vdc, i c = 0) ????? ????? i ebo ??? ??? e ???? ???? 2.0 ??? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics (1) ?????????????????????? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 10 adc, v ce = 3.0 vdc) dc current gain (i c = 20 adc, v ce = 3.0 vdc) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 750 100 ???? ? ?? ? ???? 18,000 e ??? ? ? ? ??? e ?????????????????????? ?????????????????????? collectoremitter saturation voltage (i c = 10 adc, i b = 40 madc) collectoremitter saturation voltage (i c = 20 adc, i b = 200 madc) ????? ????? v ce(sat) ??? ??? e e ???? ???? 2.0 3.0 ??? ??? vdc ?????????????????????? ?????????????????????? baseemitter on voltage (i c = 10 adc, v ce = 3.0 vdc) ????? ????? v be(on) ??? ??? e ???? ???? 2.8 ??? ??? vdc ?????????????????????? ?????????????????????? baseemitter saturation voltage (i c = 20 adc, i b = 200 madc) ????? ????? v be(sat) ??? ??? e ???? ???? 4.0 ??? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ?????????????????????? currentgain bandwidth product (i c = 10 adc, v ce = 3.0 vdc, f = 1.0 mhz) ????? ????? f t ??? ??? 4.0 ???? ???? e ??? ??? mhz ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 0.1 mhz) mjh6284 mjh6287 ????? ? ??? ? ? ??? ? ????? c ob ??? ? ? ? ? ? ? ??? e e ???? ? ?? ? ? ?? ? ???? 400 600 ??? ? ? ? ? ? ? ??? pf ?????????????????????? ?????????????????????? smallsignal current gain (i c = 10 adc, v ce = 3.0 vdc, f = 1.0 khz) ????? ????? h fe ??? ??? 300 ???? ???? e ??? ??? e ????????????????????????????????? ????????????????????????????????? switching characteristics ?????????????????????? ?????????????????????? ????? ????? ?????? ?????? typical ??? ??? ?????????????????????? ?????????????????????? resistive load ????? ????? symbol ??? ??? npn ???? ???? pnp ??? ??? unit ??????? ??????? delay time ???????????????? ???????????????? ????? ????? t d ??? ??? 0.1 ???? ???? 0.1 ??? ??? m s ??????? ??????? rise time ???????????????? ???????????????? v cc = 30 vdc, i c = 10 adc i b1 =i b2 = 100 ma ????? ????? t r ??? ??? 0.3 ???? ???? 0.3 ??? ??? ??????? ??????? storage time ???????????????? ???????????????? i b1 = i b2 = 100 ma duty cycle = 1.0% ????? ????? t s ??? ??? 1.0 ???? ???? 1.0 ??? ??? ??????? ??????? fall time ???????????????? ???????????????? duty cycle 1.0% ????? ????? t f ??? ??? 3.5 ???? ???? 2.0 ??? ??? (1) pulse test: pulse width = 300 m s, duty cycle = 2.0%. figure 2. switching times test circuit figure 3. darlington schematic r b & r c varied to obtain desired current levels d 1 , must be fast recovery types, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma v2 approx +12 v 0 v1 approx -8.0 v 25 m s t r , t f , 10 ns duty cycle = 1.0% for t d and t r , d 1 is disconnected and v2 = 0 for npn test circuit reverse diode and voltage polarities. tut v cc -30 v scope 8.0 k 50 +4.0 v r b 51 d 1 r c npn mjh6284 pnp mjh6287 collector collector emitter emitter base base
mjh6284 mjh6287 http://onsemi.com 3 figure 4. thermal response t, time (ms) 1.0 0.01 0.03 0.7 0.2 0.1 0.05 0.02 r(t), effective transient thermal 0.05 1.0 3.0 5.0 10 30 50 100 300 500 r q jc (t) = r(t) r q jc r q jc = 0.78 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.1 0.5 0.2 resistance (normalized) 1000 0.5 0.3 0.07 0.03 0.01 0.02 2.0 20 200 0.3 0.2 0.1 0.05 0.02 0.01 figure 5. mjh6284, mjh6287 t j = 150 c dc v ce , collector-emitter voltage (volts) 2.0 50 2.0 i c , collector current (amps) 0.1 5.0 10 10 0.5 50 0.2 5.0 20 1.0 20 100 0.05 0.5 ms 1.0 ms 5.0 ms 0.1 ms fbsoa, forward bias safe operating area second breakdown limited bonding wire limited thermal limitation @t c = 25 c (single pulse) v ce , collector-emitter voltage (volts) 0 50 60 i c , collector current (amps) 10 20 80 40 40 10 duty cycle = 10% 30 20 30 110 100 0 figure 6. maximum rbsoa, reverse bias safe operating area l = 200 m h i c /i b 100 t c = 25 c v be(off) = 0-5.0 v r be = 47 w forward bias there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
mjh6284 mjh6287 http://onsemi.com 4 v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) i b , base current (ma) 200 500 300 1000 2000 3000 npn pnp 1.0 0.8 2.0 5.0 2.2 1.8 2.6 2.4 3.0 10 2.0 30 2.8 1.0 1.6 50 100 i c = 15 a figure 7. dc current gain 0.2 20 3.0 1.0 0.5 5.0 10 0.3 2.0 7.0 20 h fe , dc current gain t j = 150 c 25 c -55 c v ce = 3.0 v i c , collector current (amps) figure 8. collector saturation region figure 9. aono voltages 1.2 1.4 300 500 1000 200 t j = 25 c i c = 10 a i c = 5.0 a 0.1 i c , collector current (amps) 2.0 1.5 v, voltage (volts) 3.0 2.5 1.0 0.5 0.2 0.5 5.0 0.3 1.0 0.7 3.0 30 t j = 25 c v be(sat) @ i c /i b = 250 v be @ v ce = 3.0 v v ce(sat) @ i c /i b = 250 7.0 2.0 10 20 150 1000 700 500 2000 3000 5000 0.2 3.0 1.0 0.5 5.0 10 0.3 2.0 7.0 h fe , dc current gain t j = 150 c 25 c -55 c v ce = 3.0 v i c , collector current (amps) 300 i b , base current (ma) 1.0 0.8 2.0 5.0 2.2 1.8 2.6 2.4 3.0 10 2.0 30 2.8 1.0 1.6 50 100 i c = 15 a 20 1.2 1.4 300 500 200 i c = 10 a i c = 5.0 a 0.1 i c , collector current (amps) 2.0 1.5 v, voltage (volts) 3.0 2.5 1.0 0.5 0.2 0.5 5.0 0.3 1.0 0.7 3.0 30 t j = 25 c v be(sat) @ i c /i b = 250 v be(on) @ v ce = 3.0 v v ce(sat) @ i c /i b = 250 7.0 2.0 10 20 20 1000 0.7
mjh6284 mjh6287 http://onsemi.com 5 package dimensions case 340d02 issue e style 1: pin 1. base 2. collector 3. emitter 4. collector a d v g k s l u b q 123 4 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. e c j h dim min max min max inches millimeters a --- 20.35 --- 0.801 b 14.70 15.20 0.579 0.598 c 4.70 4.90 0.185 0.193 d 1.10 1.30 0.043 0.051 e 1.17 1.37 0.046 0.054 g 5.40 5.55 0.213 0.219 h 2.00 3.00 0.079 0.118 j 0.50 0.78 0.020 0.031 k 31.00 ref 1.220 ref l --- 16.20 --- 0.638 q 4.00 4.10 0.158 0.161 s 17.80 18.20 0.701 0.717 u 4.00 ref 0.157 ref v 1.75 ref 0.069
mjh6284 mjh6287 http://onsemi.com 6 notes
mjh6284 mjh6287 http://onsemi.com 7 notes
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